wbfbp-02c plastic-encapsulate diodes schottky barrier diode description silicon epitaxial planar features z small surface mounting type z low reverse current and low forward voltage z high reliability application high speed switching for detection for portable equipment:(i.e. m obile phone,mp3, md,cd-rom, dvd-rom, note book pc, etc.) marking: 5 maximum ratings and electrical characteristics, single diode @ta =25 parameter symbol limits unit peak reverse voltage v rm 40 v dc reverse voltage v r 30 v mean rectifying current i o 30 ma peak forward surge current i fsm 150 ma electrical ratings @ta =25 parameter symbol min typ max unit conditions forward voltage v f 0.37 v i f =1ma reverse current i r 0.5 a v r =30v capacitance between terminals c t 2 pf v r =1v,f=1mhz wbfbp-02c (1.00.60.5) unit: mm junction temperature t j 1 5 storage temperature t stg -55~+ 150 thermal resistance from rja 1000 junction to ambient power dissipation p d 100 mw /w DS751-40WB 2012-11 willas electronic corp. preliminary
outline drawing dimensions in inches and (millimeters) wbfbp-02c rev.b .022(0.55) .026(0.65) .037(0.95) .041(1.05) .0016(0.400)ref. .010(0.25) .014(0.35) .000(0.01)ref. .012(0.30) .018(0.45) .017(0.45)ref. .010(0.25) .014(0.35) .004(0.10) .000(0.01) .018(0.45) .022(0.55) 2012-11 willas electronic corp. wbfbp-02c plastic-encapsulate diodes DS751-40WB preliminary
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